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AFT05MS003N Datasheet

RF Power LDMOS Transistor

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Freescale Semiconductor
Technical Data
RF Power LDMOS Transistor
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
Designed for handheld two--way radio applications with frequencies from 1.8
to 941 MHz. The high gain, ruggedness and wideband performance of this
device make it ideal for large--signal, common--source amplifier applications in
handheld radio equipment.
Wideband Performance (7.5 Vdc, TA = 25C, CW)
Frequency
Pin
Gps
D
Pout
(MHz)
(dBm)
(dB)
(%)
(W)
136–174 (1,4)
17.8
17.1
67.1
3.2
350–520 (2,4)
20.0
15.1
73.0
3.2
Narrowband Performance (7.5 Vdc, TA = 25C, CW)
Frequency
(MHz)
Gps
D
Pout
(dB)
(%)
(W)
520 (3)
20.8
68.3
3.0
Load Mismatch/Ruggedness
Frequency Signal
(MHz)
Type
VSWR
Pin
(dBm)
Test
Voltage
Result
520 (3)
CW > 65:1 at all
Phase Angles
21.1
9.0
No Device
Degradation
1. Measured in 136–174 MHz VHF broadband reference circuit.
2. Measured in 350–520 MHz UHF broadband reference circuit.
3. Measured in 520 MHz narrowband production test circuit.
4. The values shown are the center band performance numbers across the indicated
frequency range.
Features
Characterized for Operation from 1.8 to 941 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband — Full Power Across the Band
Exceptional Thermal Performance
Extreme Ruggedness
Typical Applications
Output Stage VHF Band Handheld Radio
Output Stage UHF Band Handheld Radio
Output Stage for 700–900 MHz Handheld Radio
Smart Metering
Driver for 1.8–941 MHz Applications
Document Number: AFT05MS003N
Rev. 0, 8/2015
AFT05MS003N
1.8–941 MHz, 3 W, 7.5 V
WIDEBAND
AIRFAST RF POWER
LDMOS TRANSISTOR
SOT--89
Source
2
123
Gate Source Drain
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS003N
1


NXP Semiconductors Electronic Components Datasheet

AFT05MS003N Datasheet

RF Power LDMOS Transistor

No Preview Available !

Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range (1,2)
Total Device Dissipation @ TC = 25C
Derate above 25C
Symbol
VDSS
VGS
VDD
Tstg
TC
TJ
PD
Value
–0.5, +30
–6.0, +12
12.5, +0
–65 to +150
–40 to +150
–40 to +150
30.5
0.24
Unit
Vdc
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 79C, 3 W CW, 7.5 Vdc, IDQ = 100 mA, 520 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Symbol
RJC
Value (2,3)
4.1
Unit
C/W
Class
1C, passes 1000 V
A, passes 100 V
IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
1
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 30 Vdc, VGS = 0 Vdc)
IDSS
2
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 7.5 Vdc, VGS = 0 Vdc)
IDSS
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
500
nAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 67 Adc)
VGS(th)
1.8
2.2
2.6
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 700 mAdc)
VDS(on)
0.25
Vdc
Forward Transconductance
(VDS = 7.5 Vdc, ID = 2.6 Adc)
gfs
3.1
S
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 7.5 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
1.1
pF
Output Capacitance
(VDS = 7.5 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
23.2
pF
Input Capacitance
(VDS = 7.5 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
Ciss
38.5
pF
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
(continued)
AFT05MS003N
2
RF Device Data
Freescale Semiconductor, Inc.


Part Number AFT05MS003N
Description RF Power LDMOS Transistor
Maker NXP
Total Page 3 Pages
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