AFT05MS003N - RF Power LDMOS Transistor

NXP

AFT05MS003N Description

Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N *Channel Enhancement *Mode Lateral MOSFET Designed .

AFT05MS003N Features

* Characterized for Operation from 1.8 to 941 MHz
* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Integrated ESD Protection
* Integrated Stability Enhancements
* Wideband
* Full Power Across the Band
* Exceptional Thermal Performance
* Ext

AFT05MS003N Applications

* with frequencies from 1.8 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large
* signal, common
* source amplifier applications in handheld radio equipment. Wideband Performance (7.5 Vdc, TA = 25C, CW) Frequency Pin Gps D Pout (MH

📥 Download Datasheet

AFT05MS003N Datasheet Preview — Preview of AFT05MS003N PDF

Datasheet Details

Part number: AFT05MS003N
Manufacturer: NXP ↗
File Size: 1.19 MB
Datasheet: AFT05MS003N-NXP.pdf
Description: RF Power LDMOS Transistor

📁 Related Datasheet

AFT05MS004NT1 - RF Power LDMOS Transistor (Freescale Semiconductor)
AFT2222A - NPN General Purpose Amplifier (Alfa-MOS)
AFT240320E-2.2-9340-34A34 - LCD (ORIENT DISPLAY)

📌 All Tags

Power LDMOS Transistor NXP

NXP AFT05MS003N-like datasheet

AFT05MS006NT1 - RF Power LDMOS Transistor
AFT05MP075GNR1 - RF Power LDMOS Transistors
AFT05MP075NR1 - RF Power LDMOS Transistors
AFT09MS007NT1 - RF Power LDMOS Transistor
AFT09MS015NT1 - RF Power LDMOS Transistor
AFT09MS031GNR1 - RF Power LDMOS Transistor