AFT09MS031GNR1 Description
Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, mon source amplifier applications in mobile radio equipment. Measured in 870 MHz narrowband test...
AFT09MS031GNR1 Key Features
- Characterized for Operation from 764 to 941 MHz
- Unmatched Input and Output Allowing Wide Frequency Range Utilization
- Integrated ESD Protection
- Integrated Stability Enhancements
- Wideband
- Full Power Across the Band (764-870 MHz)
- 225°C Capable Plastic Package
- Exceptional Thermal Performance
- High Linearity for: TETRA, SSB, LTE
- Cost--effective Over--molded Plastic Packaging
AFT09MS031GNR1 Applications
- Characterized for Operation from 764 to 941 MHz