AFT09MS031GNR1, AFT09MS031NR1 Datasheet - NXP

AFT09MS031GNR1 RF Power LDMOS Transistor

Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs Designed for mobile two way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large signal, common source amplifier applications in mobile radio equipment. Narrowband Performance (13.6 Vdc, IDQ = 500 mA, TA = 25°C, CW) Frequency (MHz) Gps (dB.

AFT09MS031GNR1 Features

* Characterized for Operation from 764 to 941 MHz

* Unmatched Input and Output Allowing Wide Frequency Range Utilization

* Integrated ESD Protection

* Integrated Stability Enhancements

* Wideband

* Full Power Across the Band (764

* 870 MHz)

AFT09MS031NR1-NXP.pdf