NXP Semiconductors Electronic Components Datasheet

AFT09MS031GNR1 Datasheet

RF Power LDMOS Transistor

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Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

Designed for mobile two--way radio applications with frequencies from

764 to 941 MHz. The high gain, ruggedness and broadband performance of

these devices make them ideal for large--signal, common source amplifier

applications in mobile radio equipment.

Narrowband Performance (13.6 Vdc, IDQ = 500 mA, TA = 25°C, CW)

Frequency

(MHz)

Gps

(dB)

ηD

P1dB

(%)

(W)

764

18.0

74.1

870

17.2

71.0

941

15.7

68.1

800 MHz Broadband Performance (13.6 Vdc, IDQ = 100 mA, TA = 25°C, CW)

Frequency

(MHz)

Gps

(dB)

ηD

P1dB

(%)

(W)

760

15.7

62.0

820

15.7

63.0

870

15.5

61.0

Load Mismatch/Ruggedness

Frequency Signal

(MHz)

Type

VSWR

Test

(W)

Voltage Result

870 (1)

CW >65:1 at all

1.2

Phase Angles (3 dB Overdrive)

No Device

Degradation

870 (2)

2.0

(3 dB Overdrive)

1. Measured in 870 MHz narrowband test circuit.

2. Measured in 760--870 MHz broadband reference circuit.

Features

• Characterized for Operation from 764 to 941 MHz

• Unmatched Input and Output Allowing Wide Frequency Range Utilization

• Integrated ESD Protection

• Integrated Stability Enhancements

• Wideband — Full Power Across the Band (764–870 MHz)

• 225°C Capable Plastic Package

• Exceptional Thermal Performance

• High Linearity for: TETRA, SSB, LTE

• Cost--effective Over--molded Plastic Packaging

• In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.

Typical Applications

• Output Stage 800 MHz Trunking Band Mobile Radio

• Output Stage 900 MHz Trunking Band Mobile Radio

Document Number: AFT09MS031N

Rev. 1, 8/2012

AFT09MS031NR1

AFT09MS031GNR1

764--941 MHz, 31 W, 13.6 V

WIDEBAND

RF POWER LDMOS TRANSISTORS

TO--270--2

PLASTIC

AFT09MS031NR1

TO--270--2 GULL

PLASTIC

AFT09MS031GNR1

Gate

Drain

(Top View)

Note: The backside of the package is the

source terminal for the transistor.

Figure 1. Pin Connections

RF Device Data

Freescale Semiconductor, Inc.

AFT09MS031NR1 AFT09MS031GNR1

NXP Semiconductors Electronic Components Datasheet

AFT09MS031GNR1 Datasheet

RF Power LDMOS Transistor

No Preview Available !

Table 1. Maximum Ratings

Rating

Drain--Source Voltage

Gate--Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature Range

Operating Junction Temperature Range (1,2)

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Symbol

VDSS

VGS

VDD

Tstg

Value

--0.5, +40

--6.0, +12

17, +0

--65 to +150

--40 to +150

--40 to +225

317

1.59

Unit

Vdc

°C

W/°C

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Case Temperature 81°C, 31 W CW, 13.6 Vdc, IDQ = 500 mA, 870 MHz

Table 3. ESD Protection Characteristics

Test Methodology

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

Symbol

RθJC

Value (2,3)

0.63

Class

2, passes 2500 V

A, passes 100 V

IV, passes 1200 V

Unit

°C/W

Table 4. Moisture Sensitivity Level

Test Methodology

Per JESD22--A113, IPC/JEDEC J--STD--020

Rating

Package Peak Temperature

Unit

260

°C

Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 40 Vdc, VGS = 0 Vdc)

IDSS

—

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 13.6 Vdc, VGS = 0 Vdc)

IDSS

—

μAdc

Gate--Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

600

nAdc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 115 μAdc)

VGS(th)

1.6

2.1

2.6

Vdc

Drain--Source On--Voltage

(VGS = 10 Vdc, ID = 1.2 Adc)

VDS(on)

—

0.1

—

Vdc

Forward Transconductance

(VGS = 10 Vdc, ID = 10 Adc)

gfs

—

7.8

—

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

(continued)

AFT09MS031NR1 AFT09MS031GNR1

RF Device Data

Freescale Semiconductor, Inc.

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