Overview: Freescale Semiconductor Technical Data RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, mon source amplifier applications in mobile radio equipment. Narrowband Performance (13.6 Vdc, IDQ = 500 mA, TA = 25°C, CW) Frequency (MHz) Gps (dB) ηD P1dB (%) (W) 764 18.0 74.1 32 870 17.2 71.0 31 941 15.7 68.1 31 800 MHz Broadband Performance (13.6 Vdc, IDQ = 100 mA, TA = 25°C, CW) Frequency (MHz) Gps (dB) ηD P1dB (%) (W) 760 15.7 62.0 44 820 15.7 63.0 37 870 15.5 61.0 36 Load Mismatch/Ruggedness Frequency Signal (MHz) Type VSWR Pin Test (W) Voltage Result 870 (1) CW >65:1 at all 1.2 Phase Angles (3 dB Overdrive) 17 No Device Degradation 870 (2) 2.0 (3 dB Overdrive) 1. Measured in 870 MHz narrowband test circuit. 2. Measured in 760--870 MHz broadband reference circuit.
