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AFT09MS031GNR1 - RF Power LDMOS Transistor

This page provides the datasheet information for the AFT09MS031GNR1, a member of the AFT09MS031NR1 RF Power LDMOS Transistor family.

Product Overview

NXP

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AFT09MS031GNR1 RF Power LDMOS Transistor by NXP - Datasheet Preview — Datasheet preview – AFT09MS031GNR1

Datasheet Details

Part number	AFT09MS031GNR1
Manufacturer	NXP
File Size	1.03 MB
Description	RF Power LDMOS Transistor
Datasheet	AFT09MS031GNR1 Datasheet
Additional preview pages of the AFT09MS031GNR1 datasheet.

AFT09MS031GNR1 Product details

Features

Characterized for Operation from 764 to 941 MHz.
Unmatched Input and Output Allowing Wide Frequency Range Utilization.
Integrated ESD Protection.
Integrated Stability Enhancements.
Wideband.
Full Power Across the Band (764.
870 MHz).
225°C Capable Plastic Package.
Exceptional Thermal Performance.
High Linearity for: TETRA, SSB, LTE.
Cost--effective Over--molded Plastic Packaging.
In Tape an.

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Published: Jul 17, 2020 |