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AFT09MS031GNR1 - RF Power LDMOS Transistor

Download the AFT09MS031GNR1 datasheet PDF. This datasheet also covers the AFT09MS031NR1 variant, as both devices belong to the same rf power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Characterized for Operation from 764 to 941 MHz.
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization.
  • Integrated ESD Protection.
  • Integrated Stability Enhancements.
  • Wideband.
  • Full Power Across the Band (764.
  • 870 MHz).
  • 225°C Capable Plastic Package.
  • Exceptional Thermal Performance.
  • High Linearity for: TETRA, SSB, LTE.
  • Cost--effective Over--molded Plastic Packaging.
  • In Tape an.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFT09MS031NR1-NXP.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio equipment. Narrowband Performance (13.6 Vdc, IDQ = 500 mA, TA = 25°C, CW) Frequency (MHz) Gps (dB) ηD P1dB (%) (W) 764 18.0 74.1 32 870 17.2 71.0 31 941 15.7 68.1 31 800 MHz Broadband Performance (13.6 Vdc, IDQ = 100 mA, TA = 25°C, CW) Frequency (MHz) Gps (dB) ηD P1dB (%) (W) 760 15.7 62.0 44 820 15.7 63.0 37 870 15.5 61.