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AFT23S160W02SR3 - RF Power LDMOS Transistors

Key Features

  • Designed for Wide Instantaneous Bandwidth.

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Full PDF Text Transcription for AFT23S160W02SR3 (Reference)

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Freescale Semiconductor Technical Data Document Number: AFT23S160W02S Rev. 0, 11/2013 RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 45 watt ...

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Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 45 watt RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz. • Typical Single−Carrier W−CDMA Performance: VDD = 28 Vdc, IDQ = 1100 mA, Pout = 45 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) hD Output PAR ACPR IRL (%) (dB) (dBc) (dB) 2300 MHz 2350 MHz 2400 MHz 17.7 31.0 17.8 30.5 17.9 30.3 6.8 −34.6 −18 6.7 −34.5 −25 6.6 −33.

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