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AFT23S160W02GSR3 - RF Power LDMOS Transistors

Download the AFT23S160W02GSR3 datasheet PDF. This datasheet also covers the AFT23S160W02SR3 variant, as both devices belong to the same rf power ldmos transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Designed for Wide Instantaneous Bandwidth.

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Note: The manufacturer provides a single datasheet file (AFT23S160W02SR3-NXP.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: AFT23S160W02S Rev. 0, 11/2013 RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 45 watt RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz. • Typical Single−Carrier W−CDMA Performance: VDD = 28 Vdc, IDQ = 1100 mA, Pout = 45 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) hD Output PAR ACPR IRL (%) (dB) (dBc) (dB) 2300 MHz 2350 MHz 2400 MHz 17.7 31.0 17.8 30.5 17.9 30.3 6.8 −34.6 −18 6.7 −34.5 −25 6.6 −33.