AFT23S160W02GSR3 Overview
Freescale Semiconductor Technical Data Document Number: 0, 11/2013 RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 45 watt RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz. Typical Single−Carrier W−CDMA Performance:.
AFT23S160W02GSR3 Key Features
- Designed for Wide Instantaneous Bandwidth