AFT23S160W02GSR3 Datasheet (PDF) Download
NXP Semiconductors
AFT23S160W02GSR3

Key Features

  • Designed for Wide Instantaneous Bandwidth Applications
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions
  • Optimized for Doherty Applications
  • © Freescale Semiconductor, Inc
  • Symbol Value Unit VDSS
  • 0.5, +65 Vdc VGS
  • 65 to +150 °C TC
  • 40 to +125 °C TJ
  • 40 to +225 °C Characteristic Symbol Value (2,3) Unit RθJC 0.53 °C/W Table