AFT23S160W02SR3 Overview
Freescale Semiconductor Technical Data Document Number: AFT23S160W02S Rev. 0, 11/2013 RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 45 watt RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz. • Designed for Wide Instantaneous Bandwidth Applications • Greater Negative Gate−Source Voltage Range for Improved Class C Operation • Able to Withstand Extremely High Output VSWR and Broadband Operating 2300−2400 MHz, 45 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTORS NI−780S−2L AFT23S160W02SR3
AFT23S160W02SR3 Key Features
- Designed for Wide Instantaneous Bandwidth