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AFV10700H Datasheet RF Power LDMOS Transistors

Manufacturer: NXP Semiconductors

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Overview

NXP Semiconductors Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for pulse applications operating at 960 to 1215 MHz.

These devices are suitable for use in defense and commercial pulse applications with large duty cycles and long pulses, such as IFF, secondary surveillance radars, ADS--B transponders, DME and other complex pulse chains.

Typical Performance: In 1030–1090 MHz reference circuit, IDQ(A+B) = 100 mA Frequency (MHz) (1) Signal Type VDD Pout Gps D (V) (W) (dB) (%) 1030 1090 1030 1090 Pulse (128 sec, 10% Duty Cycle) 50 800 Peak 17.5 52.1 700 Peak 19.0 56.1 52 850 Peak 17.5 51.7 770 Peak 19.2 56.1 Typical Performance: In 960–1215 MHz reference circuit, IDQ(A+B) = 100 mA Frequency (MHz) Signal Type VDD Pout Gps D (V) (W) (dB) (%) 960 1030 1090 1215 Pulse (128 sec, 4% Duty Cycle) 50 747 Peak 16.7 50.8 713 Peak 16.5 49.7 700 Peak 16.5 47.1 704 Peak 16.5 54.5 Typical Performance: In 1030 MHz narrowband production test fixture, IDQ(A+B) = 100 mA Frequency (MHz) Signal Type VDD Pout Gps (V) (W) (dB) 1030 (2) Pulse (128 sec, 10% Duty Cycle) 50 730 Peak 19.2 D (%) 58.5 Narrowband Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin Test (W) Voltage 1030 (2) Pulse (128 sec, 10% Duty Cycle) > 20:1 at All Phase Angles 17.2 Peak (3 dB Overdrive) 50 1.

Key Features

  • Internally input and output matched for broadband operation and ease of use.
  • Device can be used in a single--ended, push--pull or quadrature configuration.
  • Qualified up to a maximum of 55 VDD operation.
  • High ruggedness, handles > 20:1 VSWR.
  • Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation and gate voltage pulsing.
  • Recommended drivers: MRFE6VS25N (25 W) or MRF6V10010N (10 W).
  • Included in NXP product longe.

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