AFV10700HS Datasheet | NXP Semiconductors

NXP Semiconductors Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for pulse applications operating at 960 to 1215 MHz. These devices are suitable for use in defense and mercial pulse applications with large duty cycles and long pulses, such as IFF, secondary surveillance radars, ADS--B transponders, DME and other plex pulse chains. Typical Performance: In 1030- 1090 MHz reference circuit, IDQ(A+B) = 100 m A Frequency (MHz) (1) Signal Type Pout Gps D (V) (W) (d B) (%) 1030 1090 1030 1090 Pulse (128 sec, 10% Duty Cycle) 800 Peak 700 Peak 850 Peak 770 Peak Typical Performance: In 960- 1215 MHz reference circuit, IDQ(A+B) = 100 m A Frequency (MHz) Signal Type Pout Gps D (V) (W) (d...