AFV121KGS Overview
Freescale Semiconductor Technical Data Document Number: 0, 11/2015 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for air traffic control. These devices are suitable for use in...
AFV121KGS Key Features
- Internally Input and Output Matched for Broadband Operation and Ease of Use
- Device Can Be Used Single--Ended, Push--Pull, or in a Quadrature
- Qualified up to a Maximum of 50 VDD Operation
- High Ruggedness, Handles > 20:1 VSWR
- Integrated ESD Protection with Greater Negative Voltage Range for Improved
- Characterized with Series Equivalent Large--Signal Impedance Parameters