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Freescale Semiconductor Technical Data
Document Number: AFV121KH Rev. 0, 11/2015
RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
These RF power transistors are designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for air traffic control. These devices are suitable for use in pulse applications with large duty cycles and long pulses, including Mode S ELM.
Typical Short Pulse Performance: In 960–1215 MHz reference circuit, VDD = 50 Vdc,
IDQ = 100 mA, Pin = 25 W
Frequency (MHz)
Signal Type
Pout
Gps
D
(W)
(dB)
(%)
960
Pulse
1390 Peak 17.5
51.1
1030
(128 sec, 10% Duty Cycle) 1410 Peak
17.5
51.8
1090
1370 Peak 17.4
52.
AFV121KGS Datasheet
