AFV121KGS Datasheet | NXP Semiconductors

Freescale Semiconductor Technical Data Document Number: AFV121KH Rev. 0, 11/2015 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for air traffic control. These devices are suitable for use in pulse applications with large duty cycles and long pulses, including Mode S ELM. Typical Short Pulse Performance: In 960- 1215 MHz reference circuit, VDD = 50 Vdc, IDQ = 100 m A, Pin = 25 W Frequency (MHz) Signal Type Pout Gps D (W) (d B) (%) Pulse 1390 Peak 17.5 (128 sec, 10% Duty Cycle) 1410 Peak 1370 Peak 17.4 1230 Peak 16.9 Typical Long Pulse Performance: In 960- 1215 MHz reference circuit, VDD = 50 Vdc, IDQ = 100 m A, Pin = 25 W Frequency (MHz) Signal Type Pout Gps D (W) (d...