NXP Semiconductors AFV121KHS
RF Power LDMOS Transistors
| Part No. | AFV121KHS |
|---|---|
| Datasheet | AFV121KHS Download |
| Manufacturer |  NXP Semiconductors |
| Description | RF Power LDMOS Transistors |
| Buy | Stock & Price |
FEATURES
● Internally Input and Output Matched for Broadband Operation and Ease of Use● Device Can Be Used Single--Ended, Push--Pull, or in a Quadrature Configuration
● Qualified up to a Maximum of 50 VDD Operation
● High Ruggedness, Handles > 20:1 VSWR
● Integrated ESD Protection with Greater Negative Voltage Range for Improved Class C Operation and Gate Voltage Pulsing
● Characterized with Series Equivalent Large--Signal Impedance Parameters Typical
APPLICATIONS
● Air Traffic Control Systems (ATC), Including Ground--based Secondary Radars such as Mode S ELM Interrogators● Distance Measuring Equipment (DME)
● Mode S Transponders, Including: – Traffic Alert and Collision Avoidance Systems (TCAS) – Automatic Dependent Surveillance--Broadcast In and Out (ADS--B) Using, e.g., 1090 Extended Squitter or Universal Access Transponder (UAT) AFV121KH AFV121KHS AFV121KGS 960–1215 MHz, 1000 W PEAK, 50 V AIRFAST RF POWER LDMOS TRANSISTORS NI--1230H--4S AFV121KH NI--1230S--4S AFV121KHS NI--1230GS--4L AFV121KGS Gate A 3 1 Drain A Gate B 4 2 Drain B (Top View) Note: The backside of the package is the source terminal for the transistors.
