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AFV121KHS - RF Power LDMOS Transistors

Download the AFV121KHS datasheet PDF. This datasheet also covers the AFV121KH variant, as both devices belong to the same rf power ldmos transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Internally Input and Output Matched for Broadband Operation and Ease of Use.
  • Device Can Be Used Single--Ended, Push--Pull, or in a Quadrature Configuration.
  • Qualified up to a Maximum of 50 VDD Operation.
  • High Ruggedness, Handles > 20:1 VSWR.
  • Integrated ESD Protection with Greater Negative Voltage Range for Improved Class C Operation and Gate Voltage Pulsing.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters Typical.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFV121KH-NXP.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: AFV121KH Rev. 0, 11/2015 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for air traffic control. These devices are suitable for use in pulse applications with large duty cycles and long pulses, including Mode S ELM. Typical Short Pulse Performance: In 960–1215 MHz reference circuit, VDD = 50 Vdc, IDQ = 100 mA, Pin = 25 W Frequency (MHz) Signal Type Pout Gps D (W) (dB) (%) 960 Pulse 1390 Peak 17.5 51.1 1030 (128 sec, 10% Duty Cycle) 1410 Peak 17.5 51.8 1090 1370 Peak 17.4 52.