AFV10700H - RF Power LDMOS Transistors

Product Overview

NXP

Part number	AFV10700H
Manufacturer	NXP
File Size	2.39 MB
Description	RF Power LDMOS Transistors
Datasheet	AFV10700H Datasheet
Additional preview pages of the AFV10700H datasheet.

Internally input and output matched for broadband operation and ease of use.
Device can be used in a single--ended, push--pull or quadrature configuration.
Qualified up to a maximum of 55 VDD operation.
High ruggedness, handles > 20:1 VSWR.
Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation and gate voltage pulsing.
Recommended drivers: MRFE6VS25N (25 W) or MRF6V10010N (10 W).
Included in NXP product longe.

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Published: May 5, 2020 |