AFV10700H
AFV10700H is RF Power LDMOS Transistors manufactured by NXP Semiconductors.
NXP Semiconductors Technical Data
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These RF power transistors are designed for pulse applications operating at 960 to 1215 MHz. These devices are suitable for use in defense and mercial pulse applications with large duty cycles and long pulses, such as
IFF, secondary surveillance radars, ADS--B transponders, DME and other plex pulse chains.
Typical Performance: In 1030- 1090 MHz reference circuit, IDQ(A+B) = 100 m A
Frequency (MHz) (1)
Signal Type
Pout
Gps
D
(V)
(W)
(d B)
(%)
1030 1090 1030 1090
Pulse (128 sec, 10% Duty Cycle)
800 Peak
700 Peak
850 Peak
770 Peak
Typical Performance: In 960- 1215 MHz reference circuit, IDQ(A+B) = 100 m A
Frequency (MHz)
Signal Type
Pout
Gps
D
(V)
(W)
(d...
