AFV10700H Overview
NXP Semiconductors Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for pulse applications operating at 960 to 1215 MHz. These devices are suitable for use in defense and mercial pulse applications with large duty cycles and long pulses, such as IFF, secondary surveillance radars, ADS--B transponders, DME and other plex pulse chains....
AFV10700H Key Features
- Internally input and output matched for broadband operation and ease of use
- Device can be used in a single--ended, push--pull or quadrature configuration
- Qualified up to a maximum of 55 VDD operation
- High ruggedness, handles > 20:1 VSWR
- Integrated ESD protection with greater negative gate--source voltage range
- Remended drivers: MRFE6VS25N (25 W) or MRF6V10010N (10 W)
- Included in NXP product longevity program with assured supply for a
- 0.5, +105 -6.0, +10
- 65 to +150 -55 to +150 -55 to +225