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NXP Semiconductors Technical Data
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These RF power transistors are designed for pulse applications operating at 960 to 1215 MHz. These devices are suitable for use in defense and
commercial pulse applications with large duty cycles and long pulses, such as
IFF, secondary surveillance radars, ADS--B transponders, DME and other complex pulse chains.
Typical Performance: In 1030–1090 MHz reference circuit, IDQ(A+B) = 100 mA
Frequency (MHz) (1)
Signal Type
VDD
Pout
Gps
D
(V)
(W)
(dB)
(%)
1030 1090 1030 1090
Pulse (128 sec, 10% Duty Cycle)
50
800 Peak
17.5
52.1
700 Peak
19.0
56.1
52
850 Peak
17.5
51.7
770 Peak
19.2
56.
AFV10700H Datasheet
