BAS45A Datasheet | NXP Semiconductors

FEATURES - Continuous reverse voltage: max. 125 V - Repetitive peak forward current: max. 625 m A - Low reverse current: max. 1 n A - Switching time: typ. 1.5 µs. APPLICATION - Low leakage current applications. k handbook, halfpage a DESCRIPTION Epitaxial medium-speed switching diode with a low leakage current in a hermetically-sealed glass SOD68 (DO-34) package. MAM156 Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 tp = 1 µs tp = 1 ms tp = 1 s Ptot Tstg Tj Note 1. Device mounted on a printed-circuit board without metallization pad. total power dissipation storage temperature junction temperature Tamb = 25 °C - - - - - 65 - 4 1 0.5 300 +175 175 A A A m W °C °C see Fig.2; note 1 CONDITIONS MIN. - - - - MAX. 125 125 250 625 V V m A m A UNIT 1996 Mar 13 Philips Semiconductors Product specification Low-leakage diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 1 m A IF = 10 m A IF = 100 m A IR reverse current see Fig.5 VR = 125 V; Emax = 100 lx VR = 30 V; Tj = 125 °C; Emax = 100 lx VR = 125 V; Tj = 125 °C; Emax = 100 lx VR = 125 V; Tj = 150 °C; Emax = 100 lx Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 m A to IR = 10 m A; RL = 100 Ω; measured at IR = 1 m A; see Fig.7 - - - - - 1.5 - - - CONDITIONS TYP. MAX. 780 860 1000 1 300 500 2 4 - UNIT m V m V m V n A n A n A µA p F µs THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed-circuit board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS 8 mm...