BAS85
description
Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device SMD package with tin-plated metal discs at each end. It is suitable for “automatic placement” and as such it can withstand immersion soldering.
1.2 Features and benefits
- Low forward voltage
- High breakdown voltage
- Guard-ring protected
- Hermetically sealed glass SMD package
1.3 Applications
- Ultra high-speed switching
- Voltage clamping
- Protection circuits
- Blocking diodes
1.4 Quick reference data
Table 1. Symbol IF VR VF
Quick reference data Parameter forward current reverse voltage forward voltage
Conditions IF = 100 m A
Min Typ Max Unit
- - 200 m A
- - 30 V
- - 800 m V
NXP Semiconductors
Schottky barrier diode
2. Pinning information
Table 2. Pin 1 2
Pinning Description cathode anode
[1] The marking band indicates the cathode.
3. Ordering information
Simplified outline
[1] ka
Graphic...
