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BAT81 Datasheet

Schottky barrier diodes

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DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D050
BAT81; BAT82; BAT83
Schottky barrier diodes
Product specification
Supersedes data of July 1991
1996 Mar 20


NXP Semiconductors Electronic Components Datasheet

BAT81 Datasheet

Schottky barrier diodes

No Preview Available !

Philips Semiconductors
Schottky barrier diodes
Product specification
BAT81; BAT82; BAT83
FEATURES
Low forward voltage
High breakdown voltage
Guard ring protected
Hermetically-sealed leaded glass
package
Low diode capacitance.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
handbook, halfpakge
a
MAM193
Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VR continuous reverse voltage
BAT81
BAT82
BAT83
IF continuous forward current
IFRM repetitive peak forward current
tp 1 s; δ ≤ 0.5
IFSM non-repetitive peak forward current tp 10 ms
Tstg storage temperature
Tj junction temperature
MIN. MAX. UNIT
40 V
50 V
60 V
30 mA
150 mA
500 mA
65 150 °C
125 °C
1996 Mar 20
2


Part Number BAT81
Description Schottky barrier diodes
Maker NXP
Total Page 5 Pages
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