BD830 Datasheet | NXP Semiconductors

FEATURES - High current (max. 1 A) - Low voltage (max. 80 V). APPLICATIONS - General purpose - Driver stages in hi-fi amplifiers and television circuits. DESCRIPTION PNP power transistor in a TO-202; SOT128B plastic package. NPN plement: BD829. 3 1 handbook, halfpage PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION 1 2 3 MAM304 Fig.1 Simplified outline (TO-202; SOT128B) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C Tmb ≤ 50 °C CONDITIONS open emitter open base open collector - - - - - - - - - 65 - - 65 MIN. MAX. - 100 - 80 - 5 - 1 - 1.5 - 500 2 8 +150 150 +150 UNIT V V V A A m A W W °C °C °C 1999 Apr 21 Philips Semiconductors Product specification PNP power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER thermal resistance from junction to ambient thermal resistance from junction to mounting base CONDITIONS in free air VALUE 62.5 12.5 UNIT K/W K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = - 30 V IE = 0; VCB = - 30 V; Tj = 125 °C IC = 0; VEB = - 5 V VCE = - 2 V; see Fig.2 IC = - 5 m A IC = - 150 m A IC...