| Part Number | BD830 |
|---|---|
| Manufacturer | Philips Semiconductors |
| Overview |
PNP power transistor in a TO-202; SOT128B plastic package. NPN complements: BD825 and BD829.
PINNING PIN 1 2 3
handbook, halfpage
DESCRIPTION emitter collector, connected to metal part of mounting s.
* High current (max. 1 A) * Low voltage (max. 80 V). APPLICATIONS * General purpose * Driver stages in hi-fi amplifiers and television circuits. DESCRIPTION PNP power transistor in a TO-202; SOT128B plastic package. NPN complements: BD825 and BD829. PINNING PIN 1 2 3 handbook, halfpage DESCRIPTION. |
BD830 Datasheet
The BD830 is a PNP power transistors. Download the datasheet PDF and view key features and specifications below.
| Part Number | BD830 |
|---|---|
| Description | PNP power transistor |
| Manufacturer | NXP Semiconductors |
| Overview |
PNP power transistor in a TO-202; SOT128B plastic package. NPN complement: BD829.
3 1
handbook, halfpage
BD830
PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DE.
* High current (max. 1 A) * Low voltage (max. 80 V). APPLICATIONS * General purpose * Driver stages in hi-fi amplifiers and television circuits. DESCRIPTION PNP power transistor in a TO-202; SOT128B plastic package. NPN complement: BD829. 3 1 handbook, halfpage BD830 PINNING PIN 1 2 3 emitter colle. |
| Part Number | BD830 |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD829 ·Minimum Lot-to-Lot variations for robust device performance and re. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor BD830 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturatio. |