BFR30 Datasheet - NXP

N-channel field-effect transistors

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* TH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see

BFR30 General Description

Planar epitaxial symmetrical junction N-channel field-effect transistor in a plastic SOT23 package. APPLICATIONS * Low level general purpose amplifiers in thick and thin-film circuits. PINNING - SOT23 PIN 1 2 3 Note 1. Drain and source are interchangeable. SYMBOL d s g DESCRIPTION drain(1) s.

BFR30 Datasheet (93.80 KB)

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N-channel field-effect transistors.
DISCRETE SEMICONDUCTORS DATA SHEET BFR30; BFR31 N-channel field-effect transistors Product speciﬁcation Supersedes data of April 1991 File under Dis.

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BFR30 N-channel field-effect transistors NXP

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