field-effect Datasheet | Specifications & PDF Download

  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

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SMD Type MOS Field Effect Transistor KPA1764 IC IC Features Dual chip type Low on-state resistance RDS(on)1 = 27 m RDS(on)2 = 32 m RDS(on)3 = 34 m T

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH-Q1 N-CH-Q2 BVDSS 30V 30V RDSON (MAX.) 9.5mΩ 9.5mΩ ID 30A

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplif

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9mΩ ID 50A G UIS, Rg 100% Tested S

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2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2717 DC−DC Converter and Motor Drive Applications Unit: mm l Low d

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EMB07N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 7mΩ ID 50A G N Channel

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    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  150mΩ  ID  10A  G   UIS, Rg

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2SK2399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2399 Chopper Regulator, DC−DC Converter and Motor Drive Application

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DT410EL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 100mΩ ID 16A G UIS, Rg 100% Tested

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GPT18N50 / GPT18N50D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A N Channel MOSFET UIS,

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Gr Pr STU/D601S Sa mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.2 PRODUCT SUMMARY VDSS ID R

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GPT08N65 / GPT08N65D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to pro

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CEP6060R/CEB6060R N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for e

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Gr Pr STS3409 Ver 1.0 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -30V ID -2.2A R D

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r re Pro STS3409L Ver 1.0 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m

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