H06N60U
HI-SINCERITY
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N-channel power field effect transistor. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding perfo
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📁 Related Datasheet
H06N60E - N-Channel Power Field Effect Transistor
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Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.05.12 Page No. : 1/6
H06N60 Series
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H06N60F - N-Channel Power Field Effect Transistor
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H01N60 - N-Channel Power Field Effect Transistor
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This high voltage MOSFET uses an advanced termi.
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Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6
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Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6
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H02N60SF - N-Channel Power FET
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Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6
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N-Channel.