H06N60U
HI-SINCERITY
70.89 KB
N-channel power field effect transistor.
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2.
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking ca.
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H06N60E - N-Channel Power Field Effect Transistor
(HI-SINCERITY)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.05.12 Page No. : 1/6
H06N60 Series
N-Channel .
H06N60F - N-Channel Power Field Effect Transistor
(HI-SINCERITY)
HI-SINCERITY
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Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.05.12 Page No. : 1/6
H06N60 Series
N-Channel .
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RoHS peak reflow temperature rating 260°C Low profile packages from .094” (2,39mm) to .078” (1,98mm) for PC card a.
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HI-SINCERITY
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N-Channel Power Field Effect Transistor
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H01N60 - N-Channel Power Field Effect Transistor
(HI-SINCERITY)
HI-SINCERITY
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H01N60 Series
N-Channel Power Field Effect Transistor
Description
This high voltage MOSFET uses an advanced termi.
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n n n n
High color re-production High open ratio High resolution and .
