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H06N60U, H06N60U-HI N-Channel Power Field Effect Transistor

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Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.05.12 Page No.: 1/6 H06N60 Series N-Channel .
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

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This datasheet PDF includes multiple part numbers: H06N60U, H06N60U-HI. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
H06N60U, H06N60U-HI
Manufacturer
HI-SINCERITY
File Size
70.89 KB
Datasheet
H06N60U-HI-SINCERITY.pdf
Description
N-Channel Power Field Effect Transistor
Note
This datasheet PDF includes multiple part numbers: H06N60U, H06N60U-HI.
Please refer to the document for exact specifications by model.

Features

* Robust High Voltage Termination
* Avalanc he Energy Specified
* Source-to-Drain Diode Recovery Time Comparable to

H06N60U Distributors

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