H06N60E, H06N60U-HI N-Channel Power Field Effect Transistor

HI-SINCERITY

Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.05.12 Page No.: 1/6 H06N60 Series N-Channel .
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

📥 Download Datasheet

H06N60E Datasheet Preview — This datasheet PDF includes multiple part numbers: H06N60E, H06N60U-HI. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: H06N60E, H06N60U-HI
Manufacturer: HI-SINCERITY
File Size: 70.89 KB
Datasheet: H06N60U-HI-SINCERITY.pdf
Description: N-Channel Power Field Effect Transistor
Note: This datasheet PDF includes multiple part numbers: H06N60E, H06N60U-HI.
Please refer to the document for exact specifications by model.

Features

* Robust High Voltage Termination
* Avalanc he Energy Specified
* Source-to-Drain Diode Recovery Time Comparable to

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