H06N60E

N-Channel Power Field Effect Transistor

HI-SINCERITY

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Part number:

H06N60E

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HI-SINCERITY

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Description:

N-channel power field effect transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2.
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking ca.

✔ H06N60E Features

Robust High Voltage Termination
Avalanc he Energy Specified
Source-to-Drain Diode Recovery Time Comparable to

✔ H06N60E Application

in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge

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H06N60E N-Channel Power Field Effect Transistor HI-SINCERITY

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