Datasheet4U Logo Datasheet4U.com

H06N60F Datasheet - HI-SINCERITY

H06N60F N-Channel Power Field Effect Transistor

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offer.

H06N60F Features

* Robust High Voltage Termination

* Avalanc he Energy Specified

* Source-to-Drain Diode Recovery Time Comparable to

H06N60F Datasheet (70.89 KB)

Preview of H06N60F PDF
H06N60F Datasheet Preview Page 2 H06N60F Datasheet Preview Page 3

Datasheet Details

Part number:

H06N60F

Manufacturer:

HI-SINCERITY

File Size:

70.89 KB

Description:

N-channel power field effect transistor.

📁 Related Datasheet

H06N60E N-Channel Power Field Effect Transistor (HI-SINCERITY)

H06N60U N-Channel Power Field Effect Transistor (HI-SINCERITY)

H0068ANL 10/100 PC Card LAN Magnetic Modules (Pulse)

H01N45A N-Channel Power Field Effect Transistor (HI-SINCERITY)

H01N60 N-Channel Power Field Effect Transistor (HI-SINCERITY)

H020HN01 Color TFT LCD Module (AU)

H020HN03 Color TFT LCD Module (AU)

H02N60S N-Channel Power FET (HI-SINCERITY)

TAGS

H06N60F N-Channel Power Field Effect Transistor HI-SINCERITY

H06N60F Distributor