H06N60F Datasheet - HI-SINCERITY

N-Channel Power Field Effect Transistor

H06N60F Features

* Robust High Voltage Termination

* Avalanc he Energy Specified

* Source-to-Drain Diode Recovery Time Comparable to

H06N60F General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offer.

H06N60F Datasheet (70.89 KB)

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Datasheet Details

Part number:

H06N60F

Manufacturer:

HI-SINCERITY

File Size:

70.89 KB

Description:

N-channel power field effect transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.05.12 Page No. : 1/6 H06N60 Series N-Channel .

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H06N60F N-Channel Power Field Effect Transistor HI-SINCERITY

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H06N60F Features

H06N60F General Description

Datasheet Details

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