EMZB08P03V Datasheet (Excelliance MOS) - P-Channel Logic Level Enhancement Mode Field Effect Transistor

EMZB08P03V, P-Channel Logic Level Enhancement Mode Field Effect Transistor

P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ESD Protection ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMZB08P03V LIMITS UNIT Gate-Source Voltage VGS ±20 V Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TA = 25 °C TC = 100 °C IDM -25 -14 A -18 -100 Avalanche