EMZB08P03G - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMZB08P03G
Manufacturer	Excelliance MOS
File Size	335.92 KB
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMZB08P03G Datasheet

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5 mΩ ID -20A EMZB08P03G UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ESD Protection ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current ID TC = 100 °C Pulsed Drain Current1 IDM Avalanche Current IAS Avalanche Energy L = 0.1mH, RG=25Ω EAS TA = 25 °C Power Dissipation PD TA = 100 °C Operating Junction & Storage Temperature Range Tj, Tstg 100% UIS testing in condition of VD=25V, L=0.1mH, VG=10V, IL= 20A, Rated VDS=30V P-CH THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL ±25 -20 -13 -60 -33 54.45 2.