EMZB08P03H Description
2Duty cycle < 1% 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. Pulse Width ≦ 300 usec, Duty Cycle ≦ 2%.
EMZB08P03H is P-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by Excelliance MOS.
| Part Number | Description |
|---|---|
| EMZB08P03G | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMZB08P03V | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMZB20P03L | MOSFET |
| EMZB21A03VG | MOSFET |
| EMZB21C03G | MOSFET |
2Duty cycle < 1% 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. Pulse Width ≦ 300 usec, Duty Cycle ≦ 2%.