EMZB08P03H - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

General Description

P-CH BVDSS RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ -30 V 8.5 mΩ 12.4 mΩ -93 A ID @TA=25℃ -13 A Single P Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ESD Protection ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CO

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EMZB08P03H p-channel logic level enhancement mode field effect transistor by Excelliance MOS - Datasheet Preview

Datasheet Details

Part number	EMZB08P03H
Manufacturer	Excelliance MOS
File Size	364.15 KB
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMZB08P03H Datasheet

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EMZB08P03H Single P-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: P-CH BVDSS RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ -30 V 8.5 mΩ 12.4 mΩ -93 A ID @TA=25℃ -13 A Single P Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ESD Protection ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±25 Continuous Drain Current TC = 25 °C TC = 100 °C ID -93 -59 Continuous Drain Current TA = 25 °C TA = 70 °C ID -13 -11 Pulsed Drain Current1 IDM -174 Avalanche Current IAS -50 Avalanche Energy L = 0.1mH EAS 125 Repetitive Avalanche Energy2 L = 0.05mH EAR 62.