EMZB21C03G - MOSFET

Excelliance MOS

Datasheet Details

Part number	EMZB21C03G
Manufacturer	Excelliance MOS
File Size	247.89 KB
Description	MOSFET
Datasheet	EMZB21C03G Datasheet
Additional preview pages of the EMZB21C03G datasheet.

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Full PDF Text Transcription

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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 30V ‐30V RDSON (MAX.) 21mΩ 35mΩ ID 7.5A ‐6A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ESD Protection ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=7.5A, RG=25Ω(N) L = 0.1mH, ID=‐6A, RG=25Ω(P) Repetitive Avalanche Energy2 L = 0.05mH Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range ID IDM IAS EAS EAR PD Tj, Tstg EMZB21C03G LIMITS N‐CH P‐CH ±20 ±20 7.5 ‐6 5.5 ‐5 30 ‐24 7.5 ‐6 2.8 1.8 UNIT V A mJ 1.4 0.

Published: Apr 25, 2017 |