EMB02N03HR Datasheet, mosfet equivalent, Excelliance MOS

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EMB02N03HR

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Excelliance MOS

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214.04kb

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📄 Datasheet

Description:

Mosfet.

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EMB02N03HR

Excelliance MOS

📁 Related Datasheet

EMB02N03HS - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 2.5mΩ ID 100A G UIS, Rg 100% Tested.

EMB02N60AB - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 4.0Ω ID 2A G UIS, 100% Tested S .

EMB02N60CSB - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 4.0Ω ID 2A G UIS, 100% Tested S .

EMB02K03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: S2 S2 S2 G2 N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V RDSON (MAX.) 5.5mΩ 30V 2..

EMB02Q03HP - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V 30V RDSON (MAX.) 5.0mΩ 2.0mΩ ID 53A .

EMB03K03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
(Preliminary) N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: S2 S2 S2 G2 N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V RDSON (MAX.).

EMB03N03A - MOSFET (Excelliance MOS)
EMB03N03A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 3.5mΩ ID 80A G UIS, Rg 1.

EMB03N03H - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 3.0mΩ ID 75A G UIS, Rg 100% Tested .

EMB03N03HR - MOSFET (Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 3.0mΩ ID 75A G N Channel MOSFET UI.

EMB03N03V - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 3.0mΩ ID 37A N Channel MOSFET UIS, Rg .