EMB02N03HS Datasheet - Excelliance MOS

EMB02N03HS MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 2.5mΩ ID 100A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free EMB02N03HS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=64A, RG=25Ω Repetitive Avalanche Energy3 L =.

EMB02N03HS-ExcellianceMOS.pdf