VBsemi manufacturer logo Part number: EMB09P03A Manufacturer: VBsemi File Size: 278.58kb Download: 📄 Datasheet Description: P-channel 30v mosfet.
EMB09P03A - MOSFET (Excelliance MOS) EMB09P03A P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 9mΩ ID ‐75A G UIS, Rg 1.
EMB09P03H - P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS) P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) @VGS=-10V RDSON (MAX.) @VGS=-4.5V 9.5mΩ 1.
EMB09P03V - P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS) P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 9.5mΩ ID ‐24A P‐Channel MOSFET UIS, R.
EMB09A03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS) N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH-Q1 N-CH-Q2 BVDSS 30V 30V RDSON (MAX.) 9.5mΩ 9.5mΩ ID 30A .
EMB09A03VP - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS) N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH-Q1 N-CH-Q2 VDSS 30V 30V RDSON (MAX.) 9mΩ 9mΩ ID 16A 16A.
EMB09A3HP - MOSFET (Excelliance MOS) N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: S2 S2 S2 G2 N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V 30V D2 / S1 RDSON (MAX.).
EMB09K03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS) N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: S2 S2 S2 G2 N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V 30V D2 / S1 RDSON (MAX.).
EMB09K03VP - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS) EMB09K03VP Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: Q1 Q2 BVDSS 30V 30V RDSON.
EMB09N03A - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS) N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9mΩ ID 50A UIS, Rg 100% .
EMB09N03G - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS) N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9.5mΩ ID 14A G UIS, Rg 100% Tested .
