EMB09P03V
Excelliance MOS
855.96kb
P-channel logic level enhancement mode field effect transistor.
TAGS
📁 Related Datasheet
EMB09P03A - MOSFET
(Excelliance MOS)
EMB09P03A
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
‐30V
RDSON (MAX.)
9mΩ
ID
‐75A
G
UIS, Rg 1.
EMB09P03A - P-Channel 30V MOSFET
(VBsemi)
EMB09P03A-VB
EMB09P03A-VB Datasheet P-Channel 30 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 30
0.009 at VGS = - 10 V
.
EMB09P03H - P-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
-30V
RDSON (MAX.) @VGS=-10V RDSON (MAX.) @VGS=-4.5V
9.5mΩ 1.
EMB09A03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N-CH-Q1 N-CH-Q2
BVDSS
30V
30V
RDSON (MAX.) 9.5mΩ 9.5mΩ
ID
30A
.
EMB09A03VP - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N-CH-Q1 N-CH-Q2
VDSS
30V
30V
RDSON (MAX.) 9mΩ
9mΩ
ID
16A
16A.
EMB09A3HP - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
S2 S2 S2 G2
N‐CH‐Q1 N‐CH‐Q2
BVDSS
30V
30V
D2 / S1
RDSON (MAX.).
EMB09K03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
S2 S2 S2 G2
N‐CH‐Q1 N‐CH‐Q2
BVDSS
30V
30V
D2 / S1
RDSON (MAX.).
EMB09K03VP - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
EMB09K03VP
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
▪Product Summary:
▪ Pin Description:
Q1
Q2
BVDSS
30V
30V
RDSON.
EMB09N03A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
9mΩ
ID 50A UIS, Rg 100% .
EMB09N03G - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
9.5mΩ
ID
14A
G
UIS, Rg 100% Tested
.