EMB09P03V Datasheet - Excelliance MOS

EMB09P03V P-Channel Logic Level Enhancement Mode Field Effect Transistor

P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 9.5mΩ ID ‐24A P‐Channel MOSFET UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TA = 25 °C TC = 100 °C IDM Avalanche Current IAS Avalanche Energy L = 0.1mH, IAS=‐25A, RG=25Ω EAS Repetiti.

EMB09P03V Datasheet (855.96 KB)

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Datasheet Details

Part number:

EMB09P03V

Manufacturer:

Excelliance MOS

File Size:

855.96 KB

Description:

P-channel logic level enhancement mode field effect transistor.

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EMB09P03V P-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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