EMB09A03VP Datasheet - Excelliance MOS

EMB09A03VP N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH-Q1 N-CH-Q2 VDSS 30V 30V RDSON (MAX.) 9mΩ 9mΩ ID 16A 16A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current TC = 25 °C TC = 100 °C Pulsed Drain Current1 Avalanche Current Avalanche Energy L = 0.1mH, RG=25Ω Repetitive Avalanche Ene.

EMB09A03VP Datasheet (968.58 KB)

EMB09A03VP Datasheet Preview — Preview of EMB09A03VP PDF

Datasheet Details

Part number:

EMB09A03VP

Manufacturer:

Excelliance MOS

File Size:

968.58 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMB09A03VP N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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