EMB09A03VP - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMB09A03VP
Manufacturer	Excelliance MOS
File Size	968.58 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB09A03VP Datasheet

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH-Q1 N-CH-Q2 VDSS 30V 30V RDSON (MAX.) 9mΩ 9mΩ ID 16A 16A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current TC = 25 °C TC = 100 °C Pulsed Drain Current1 Avalanche Current Avalanche Energy L = 0.1mH, RG=25Ω Repetitive Avalanche Energy2 L = 0.