EMB09A03VP Datasheet, Transistor, Excelliance MOS

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Part number:

EMB09A03VP

Manufacturer:

Excelliance MOS

File Size:

968.58kb

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📄 Datasheet

Description:

N-channel logic level enhancement mode field effect transistor.

TAGS

EMB09A03VP

Excelliance MOS

📁 Related Datasheet

EMB09A03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH-Q1 N-CH-Q2 BVDSS 30V 30V RDSON (MAX.) 9.5mΩ 9.5mΩ ID 30A .

EMB09A3HP - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: S2 S2 S2 G2 N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V 30V D2 / S1 RDSON (MAX.).

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EMB09K03VP - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
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    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  30V  D RDSON (MAX.)  9mΩ  ID  50A    UIS, Rg 100% .

EMB09N03G - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9.5mΩ ID 14A G UIS, Rg 100% Tested .

EMB09N03H - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9mΩ ID 50A G UIS, Rg 100% Tested S.

EMB09N03HR - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9.5mΩ ID 50A G UIS, Rg 100% Tested .

EMB09N03V - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
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EMB09N03VAT - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMB09N03VAT N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9.5mΩ ID 10A G UIS, Rg.