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EMB09P03A-VB
EMB09P03A-VB Datasheet P-Channel 30 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 30
0.009 at VGS = - 10 V
0.011 at VGS = - 4.5 V
ID (A)a -60
-58
FEATURES • Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
TO-252
S G
GDS Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
ID
TC = 125 °C
Pulsed Drain Current
IDM
Avalanche Current
IAR
Repetitive Avalanche Energyb
L = 0.