EMB09P03A Datasheet | Excelliance MOS

P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) @VGS=-10V RDSON (MAX.) @VGS=-4.5V 9mΩ 17mΩ ID@TC=25°C -60A Single P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C Avalanche Current Avalanche Energy L = 0.1m H Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 100% UIS testing in condition of VD=-15V, L=0.1m H, VG=-10V, IL=-15A, Rated VDS=-30V P-CH LIMITS ±25 -60 -38 -192 -20 20 50 20 -55 to 150 UNIT V A m J W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient3 RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 375°C / W when mounted on a 1 in2 pad of 2 oz copper. TYPICAL...