EMB09P03V
EMB09P03V is P-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by Excelliance MOS.
Description
:
BVDSS RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ ID @TA=25℃
P-CH -30V 9.5mΩ 18mΩ -57A -12A
Single P Channel MOSFET UIS, Rg 100% Tested Ro HS & Halogen Free & TSCA pliant
- ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
Continuous Drain Current1
TC = 25 °C TC = 100 °C
Continuous Drain Current1
Pulsed Drain Current1 Avalanche Current1 Avalanche Energy1 Repetitive Avalanche Energy2
TA = 25 °C TA = 70 °C
L = 0.1m H L = 0.05m H
Power Dissipation1 Power Dissipation1
TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
VGS ID
ID IDM IAS EAS EAR PD
PD Tj, Tstg
±25 -57 -36 -12 -9 -144 -25 31.25 15.625 48.1 19.2 2.2 1.4 -55 to 150
- 100% UIS testing in condition of VD=25V, L=0.1m H, VG=10V, IL=15A,RG=25Ω, Rated VDS=-30V P-CH
- THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Case
RθJC
Junction-to-Ambient3 t≦10s Steady-State
RθJA RθJA
25 57
1Pulse width limited by maximum junction temperature.
2Duty cycle ≦ 1％
3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
4Guarantee by Engineering test
2025/3/12
UNIT V A m J W W °C UNIT °C /...
