EMB09P03V Overview
2Duty cycle ≦ 1% 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. Pulse Width ≦ 300 usec, Duty Cycle ≦ 2%.
EMB09P03V datasheet by Excelliance MOS.
| Part number | EMB09P03V |
|---|---|
| Datasheet | EMB09P03V-ExcellianceMOS.pdf |
| File Size | 356.84 KB |
| Manufacturer | Excelliance MOS |
| Description | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
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2Duty cycle ≦ 1% 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. Pulse Width ≦ 300 usec, Duty Cycle ≦ 2%.
View EMB09P03A datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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EMB09P03A | P-Channel 30V MOSFET | VBsemi |
View all Excelliance MOS datasheets
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|---|---|
| EMB09P03A | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB09P03H | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB09A03HP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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| EMB09K03HP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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| EMB09N03A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB09N03G | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB09N03H | N-Channel Logic Level Enhancement Mode Field Effect Transistor |