• Part: EMB09P03H
  • Description: P-Channel Logic Level Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: Excelliance MOS
  • Size: 350.10 KB
Download EMB09P03H Datasheet PDF
Excelliance MOS
EMB09P03H
EMB09P03H is P-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by Excelliance MOS.
P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) @VGS=-10V RDSON (MAX.) @VGS=-4.5V 9.5mΩ 17mΩ ID@TC=25°C -59A Single P Channel MOSFET UIS, Rg 100% Tested Ro HS & Halogen Free & TSCA pliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate-Source Voltage ±25 TC = 25 °C Continuous Drain Current TA= 25 °C(t≦10s) -59 -20 TA= 25 °C(Steady-State) -13 Pulsed Drain Current1 TC = 100 °C -37 -184 Avalanche Current -53 Avalanche Energy L = 0.1m...