EMB09P03A Datasheet - Excelliance MOS

EMB09P03A MOSFET

EMB09P03A P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 9mΩ ID ‐75A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=‐20A, RG=25Ω Power Dissipation TC = 25 °C TC = .

EMB09P03A Datasheet (193.97 KB)

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Datasheet Details

Part number:

EMB09P03A

Manufacturer:

Excelliance MOS

File Size:

193.97 KB

Description:

Mosfet.

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