EMB09P03H Datasheet - Excelliance MOS

EMB09P03H P-Channel Logic Level Enhancement Mode Field Effect Transistor

P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) @VGS=-10V RDSON (MAX.) @VGS=-4.5V 9.5mΩ 17mΩ ID@TC=25°C -59A Single P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMB09P03H LIMITS UNIT Gate-Source Voltage VGS ±25 V TC = 25 °C Continuous Drain Current ID TA= 25 °C(t≦10s) -59 -20 A TA= 25 °C(Stea.

EMB09P03H Datasheet (417.59 KB)

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Datasheet Details

Part number:

EMB09P03H

Manufacturer:

Excelliance MOS

File Size:

417.59 KB

Description:

P-channel logic level enhancement mode field effect transistor.

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EMB09P03H P-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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