EMB09N03A Datasheet - Excelliance MOS

EMB09N03A N-Channel Logic Level Enhancement Mode Field Effect Transistor

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9mΩ ID 50A UIS, Rg 100% Tested G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMB09N03A LIMITS UNIT Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 .

EMB09N03A-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMB09N03A

Manufacturer:

Excelliance MOS

File Size:

216.80 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMB09N03A EMB09N03A N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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