N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9.5mΩ ID 50A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free EMB09N03HR ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=37.5A, RG=25Ω L = 0
Datasheet Details
Part number:
EMB09N03HR
Manufacturer:
Excelliance MOS
File Size:
223.57 KB
Description:
N-channel logic level enhancement mode field effect transistor.