EMB09N03HR Datasheet - Excelliance MOS

EMB09N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9.5mΩ ID 50A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free EMB09N03HR ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=37.5A, RG=25Ω L = 0.

EMB09N03HR-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMB09N03HR

Manufacturer:

Excelliance MOS

File Size:

223.57 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMB09N03HR EMB09N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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