Enhancement Datasheet | Specifications & PDF Download

MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge

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20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the sel

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9mΩ ID 50A G UIS, Rg 100% Tested S

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http://www.ncepower.com Pb Free Product NCE8290 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290 uses advanced trench technology

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Free Datasheet http://www.datasheet-pdf.com/ FHP740 FHP740 N MOS 。 AC-DC ， DC-DC， HPMW。 ★ ★ ★ 7A,400V,RDS(on)(）0.51Ω 、 （TC =25℃） — TC=2

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http://www.ncepower.com Pb Free Product NCE4688 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4688 uses advanced trench technolog

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AP60T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching ▼ RoHS Compliant G

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SRFET TM AO4712 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFET The AO4712 uses advanced trench technology with a mo

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  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%

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http://www.ncepower.com Pb Free Product NCE82H140 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140 uses advanced trench technol

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AP85T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low Gate Charge www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE POWER MOSFET D

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HM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge a

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MOS-TECH Semiconductor Co.,LTD MT8103 P-Channel Enhancement Mode Field Effect Transistor Product Summary VDS= -30V ID= -13A (VGS= -10V) ≦ ΩRDS(ON)

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HY1906P/B N-Channel Enhancement Mode MOSFET Features • 60V / 120 A , RDS(ON)= 6.0 mΩ (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugge

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WTM2305 P-Channel Enhancement Mode Power MOSFET Description ■ The WTM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charg

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SSM60T03H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching Description D G S BV DSS R DS(ON) ID 3

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HY3810P/M/B/PS/PM Features • 100V/180A RDS(ON) = 5.0 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices

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