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Enhancement

Enhancement DataSheet

Bruckewell

A1SHB - P-Channel Enhancement Mode Power MOSFET

 · 3076 Hits ● VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic diagram ● High power and current handing capability ...
Rectron

A19T - P-Channel Enhancement Mode Power MOSFET

 · 355 Hits VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V High power and current handing capability Lead ...
Excelliance MOS

B09N03 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

 · 151 Hits pad of 2 oz copper. UNIT V A mJ W °C UNIT °C / W 2012/3/9 p.1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL ...
APE

85T03GH - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

 · 144 Hits hermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.4 110 Units ℃/W ℃/W Data & specifications subject to change wit...
ROUM

20N60 - 20A 600V N-channel Enhancement Mode Power MOSFET

 · 121 Hits ● Fast Switching ● Low On Resistance(Rdson≤0.45Ω) ● Low Gate Charge(Typical:61nC) ● Low Reverse Transfer Capacitances(Typical:20pF) ● 100% Single Puls...
HOOYI

HY5608W - N-Channel Enhancement Mode MOSFET

 · 115 Hits • 80V/360A RDS(ON) = 1.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Ap...
Excelliance MOS

A06N03N - N-Channel Logic Level Enhancement Mode Field Effect Transistor

 · 111 Hits maximum junction temperature.  2Duty cycle  1％            1.8  °C / W  75  2013/8/21  p.1    ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless O...
Alpha & Omega Semiconductors

AO4712 - N-Channel Enhancement Mode Field Effect Transistor

 · 104 Hits VDS (V) = 30V ID =11.2A (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 10V) RDS(ON) < 18mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D S S S G www.DataS...
Advanced Power Electronics

60T03GH - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

 · 101 Hits tal Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Paramet...
Feihonltd

FHP740 - N-channel enhancement mode power MOS FET

 · 101 Hits ...
Silicon Standard

60T03H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

 · 91 Hits ating Factor Single Pulse Avalanche Energy3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-c T...
HOOYI

HY5012W - N-Channel Enhancement Mode MOSFET

 · 85 Hits ...
NCE Power Semiconductor

NCE4688 - N & P-Channel Enhancement Mode Power MOSFET

 · 63 Hits ● N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V N-channel P-channel Schematic diagram ● P-Channel VDS = -60V,ID = -6A RDS(ON) < 80mΩ @ VGS...
NCE Power Semiconductor

NCE8290 - N-Channel Enhancement Mode Power MOSFET

 · 58 Hits ● VDS = 82V,ID =90A RDS(ON) < 8.5mΩ @ VGS=10V (Typ:7.5mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra ...
HOOYI

HY3215 - N-Channel Enhancement Mode MOSFET

 · 53 Hits ...
HOOYI

HY3008P - N-Channel Enhancement Mode MOSFET

 · 50 Hits ...
HOOYI

HY3810B - N-Channel Enhancement Mode MOSFET

 · 49 Hits ...
Advanced Power Electronics

IRF840 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

 · 48 Hits rage Temperature Range Operating Junction Temperature Range 320 8 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistan...
NCE Power

NCE8580 - NCE N-Channel Enhancement Mode Power MOSFET

 · 43 Hits ● VDS =85V,ID =80A RDS(ON) < 8.5mΩ @ VGS=10V (Typ:6.8mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and ...
HOOYI

HY1908PM - N-Channel Enhancement Mode MOSFET

 · 39 Hits • 80V/90A, RDS(ON)= 7.0mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Descr...
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