NCE4688
Overview
The NCE4688 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
- N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V N-channel P-channel Schematic diagram
- P-Channel VDS = -60V,ID = -6A RDS(ON) < 80mΩ @ VGS=-10V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package Marking and pin assignment Package Marking and Ordering Information SOP-8 top view
