NCE Power Semiconductor NCE4688
The NCE4688 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.| Part No. | NCE4688 |
|---|---|
| Datasheet | NCE4688 Download |
| Manufacturer |  NCE Power Semiconductor |
| Description | N & P-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
● N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V N-channel P-channel Schematic diagram● P-Channel VDS = -60V,ID = -6A RDS(ON) < 80mΩ @ VGS=-10V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package Marking and pin assignment Package Marking and Ordering Information SOP-8 top view Device Marking Device Device Package Reel Size Tape width 4688 NCE4688 SOP-8 Ø330mm 12mm
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Quantity 2500 units Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TA=25℃ TA=100
