EMB09N03VAT Datasheet - Excelliance MOS

EMB09N03VAT N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB09N03VAT N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9.5mΩ ID 10A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free Bottom View S D D S D GD D PIN 1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L.

EMB09N03VAT-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMB09N03VAT

Manufacturer:

Excelliance MOS

File Size:

179.68 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMB09N03VAT EMB09N03VAT N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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