EMB09K03VP
Excelliance MOS
668.00kb
Dual n-channel logic level enhancement mode field effect transistor. Q1 Q2 BVDSS 30V 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 20.0mΩ 9.0mΩ 30.0mΩ 15.0mΩ ID @TC=25℃ 32.0A 49.0A ID @TA=25
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EMB09K03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
S2 S2 S2 G2
N‐CH‐Q1 N‐CH‐Q2
BVDSS
30V
30V
D2 / S1
RDSON (MAX.).
EMB09A03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N-CH-Q1 N-CH-Q2
BVDSS
30V
30V
RDSON (MAX.) 9.5mΩ 9.5mΩ
ID
30A
.
EMB09A03VP - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N-CH-Q1 N-CH-Q2
VDSS
30V
30V
RDSON (MAX.) 9mΩ
9mΩ
ID
16A
16A.
EMB09A3HP - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
S2 S2 S2 G2
N‐CH‐Q1 N‐CH‐Q2
BVDSS
30V
30V
D2 / S1
RDSON (MAX.).
EMB09N03A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
9mΩ
ID 50A UIS, Rg 100% .
EMB09N03G - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
9.5mΩ
ID
14A
G
UIS, Rg 100% Tested
.
EMB09N03H - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
9mΩ
ID
50A
G
UIS, Rg 100% Tested
S.
EMB09N03HR - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
9.5mΩ
ID
50A
G
UIS, Rg 100% Tested
.
EMB09N03V - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
EMB09N03V
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
▪Product Summary:
▪ Pin Description:
N-CH
BVDSS
30V
RDSON (MAX..
EMB09N03VAT - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
EMB09N03VAT
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
9.5mΩ
ID
10A
G
UIS, Rg.