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H05N60E

N-Channel Power Field Effect Transistor

H05N60E Datasheet (56.83 KB)

Preview of H05N60E PDF Datasheet

Datasheet Details

Part number:

H05N60E

Manufacturer:

HI-SINCERITY

File Size:

56.83 KB

Description:

N-channel power field effect transistor

H05N60E Features

* Higher Current Rating

* Lower RDS(on)

* Lower Capacitances

* Lower Total Gate Charge

* Tighter VSD Specifications

* Avalanche Energy Specified Absolute Maximum Ratings H05N60 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: G

H05N60E General Description

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters.

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H0500KC25F - Fast Symmetrical Gate Turn-Off Thyristor (IXYS)
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H0500KC25G - Fast Symmetrical Gate Turn-Off Thyristor (IXYS)
WESTCODE An IXYS Company Date:- 4 Aug, 2004 Data Sheet Issue:- 2 Fast Symmetrical Gate Turn-Off Thyristor Type H0500KC25# Absolute Maximum Ratings .

H0500KC25H - Fast Symmetrical Gate Turn-Off Thyristor (IXYS)
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TAGS

H05N60E N-Channel Power Field Effect Transistor HI-SINCERITY

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