H05N60F, H05N60E-Hi N-Channel Power Field Effect Transistor

HI-SINCERITY

Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: MOS200603 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No.: 1/5 H05N60 Series N-Channel .
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.

📥 Download Datasheet

H05N60F Datasheet Preview — This datasheet PDF includes multiple part numbers: H05N60F, H05N60E-Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: H05N60F, H05N60E-Hi
Manufacturer: HI-SINCERITY
File Size: 56.83 KB
Datasheet: H05N60E-Hi-SincerityMocroelectronics.pdf
Description: N-Channel Power Field Effect Transistor
Note: This datasheet PDF includes multiple part numbers: H05N60F, H05N60E-Hi.
Please refer to the document for exact specifications by model.

Features

* Higher Current Rating
* Lower RDS(on)
* Lower Capacitances
* Lower Total Gate Charge
* Tighter VSD Specifications
* Avalanche Energy Specified Absolute Maximum Ratings H05N60 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: G

H05N60F Distributors

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H05N60E-Hi N-Channel Power Field Effect Transistor HI-SINCERITY

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