H05N60E-Hi-SincerityMocroelectronics.pdf
Datasheet Details
Part number:
H05N60F, H05N60E-Hi
Manufacturer:
HI-SINCERITY
File Size:
56.83 KB
Description:
N-channel power field effect transistor.
Note:
This datasheet PDF includes multiple part numbers: H05N60F, H05N60E-Hi.
Please refer to the document for exact specifications by model.
H05N60F, H05N60E-Hi, N-Channel Power Field Effect Transistor
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as power suplies, converters
H05N60F Features
* Higher Current Rating
* Lower RDS(on)
* Lower Capacitances
* Lower Total Gate Charge
* Tighter VSD Specifications
* Avalanche Energy Specified Absolute Maximum Ratings H05N60 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: G
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