H05N60F Datasheet - HI-SINCERITY

N-Channel Power Field Effect Transistor

H05N60F Features

* Higher Current Rating

* Lower RDS(on)

* Lower Capacitances

* Lower Total Gate Charge

* Tighter VSD Specifications

* Avalanche Energy Specified Absolute Maximum Ratings H05N60 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: G

H05N60F General Description

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters.

H05N60F Datasheet (56.83 KB)

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Datasheet Details

Part number:

H05N60F

Manufacturer:

HI-SINCERITY

File Size:

56.83 KB

Description:

N-channel power field effect transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200603 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 H05N60 Series N-Channel .

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H05N60F N-Channel Power Field Effect Transistor HI-SINCERITY

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H05N60F Features

H05N60F General Description

Datasheet Details

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