H05N60F

N-Channel Power Field Effect Transistor

HI-SINCERITY

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Datasheet Details

Part number:

H05N60F

Manufacturer:

HI-SINCERITY

File Size:

56.83 KB

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📥 H05N60F Datasheet PDF

Description:

N-channel power field effect transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200603 Issued Date : 2006.02.01 Revised Date : 2.
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and swi.

✔ H05N60F Features

Higher Current Rating
Lower RDS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified Absolute Maximum Ratings

✔ H05N60F Application

such as power suplies, converters, power motor controls and bridge circuits. Features
Higher Current Ratin

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H05N60F N-Channel Power Field Effect Transistor HI-SINCERITY