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GPT10N50AD, GPT10N50A - POWER FIELD EFFECT TRANSISTOR

GPT10N50AD Description

GPT10N50A, GPT10N50AD POWER FIELD EFFECT TRANSISTOR GENERAL .
FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capabil.

GPT10N50AD Features

* This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFE

GPT10N50AD Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected vo

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: GPT10N50AD, GPT10N50A. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
GPT10N50AD, GPT10N50A
Manufacturer
Greatpower
File Size
1.17 MB
Datasheet
GPT10N50A-Greatpower.pdf
Description
POWER FIELD EFFECT TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: GPT10N50AD, GPT10N50A.
Please refer to the document for exact specifications by model.

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POWER FIELD EFFECT TRANSISTOR Greatpower
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