GPT10N50AD, GPT10N50A POWER FIELD EFFECT TRANSISTOR

Description

GPT10N50A, GPT10N50AD POWER FIELD EFFECT TRANSISTOR GENERAL .
FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capabil.

📥 Download Datasheet

GPT10N50AD Datasheet Preview — This datasheet PDF includes multiple part numbers: GPT10N50AD, GPT10N50A. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: GPT10N50AD, GPT10N50A
Manufacturer: Greatpower
File Size: 1.17 MB
Datasheet: GPT10N50A-Greatpower.pdf
Description: POWER FIELD EFFECT TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: GPT10N50AD, GPT10N50A.
Please refer to the document for exact specifications by model.

Features

* This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFE

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected vo

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GPT10N50A POWER FIELD EFFECT TRANSISTOR Greatpower

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