GPT10N45D Features
* This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offer
Datasheet Details
GPT10N45D, GPT10N45
Greatpower
1.18 MB
Power field effect transistor.
This datasheet PDF includes multiple part numbers: GPT10N45D, GPT10N45.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
GPT10N45 POWER FIELD EFFECT TRANSISTOR (Greatpower)
GPT10N50A POWER FIELD EFFECT TRANSISTOR (Greatpower)
GPT10N50AD POWER FIELD EFFECT TRANSISTOR (Greatpower)
GPT10N60 POWER FIELD EFFECT TRANSISTOR (Greatpower)
GPT10N60D POWER FIELD EFFECT TRANSISTOR (Greatpower)
GPT10N65 POWER FIELD EFFECT TRANSISTOR (Greatpower)
GPT10N65D POWER FIELD EFFECT TRANSISTOR (Greatpower)
GPT1000A General Touch Sensor Controller (Generalplus)
GPT10N45D Distributor
