GPT10N45D Features
* This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offer
Datasheet Details
GPT10N45D, GPT10N45
Greatpower
1.18 MB
Power field effect transistor.
This datasheet PDF includes multiple part numbers: GPT10N45D, GPT10N45.
Please refer to the document for exact specifications by model.
GPT10N45D Distributor
📁 Related Datasheet
📌 All Tags
