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GPT10N45 POWER FIELD EFFECT TRANSISTOR

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Description

GENERAL .
GPT10N45 GPT10N45D POWER FIELD EFFECT TRANSISTOR FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-b.

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Datasheet Specifications

Part number
GPT10N45
Manufacturer
Greatpower
File Size
1.18 MB
Datasheet
GPT10N45-Greatpower.pdf
Description
POWER FIELD EFFECT TRANSISTOR

Features

* This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offer

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Robust High Voltage Termination Aval

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