Part number:
GPT10N50A
Manufacturer:
Greatpower
File Size:
1.17 MB
Description:
Power field effect transistor.
* This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFE
GPT10N50A
Greatpower
1.17 MB
Power field effect transistor.
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APR. 30, 2012 Version 1.1
GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without.
