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GPT10N65 Datasheet - Greatpower

GPT10N65 - POWER FIELD EFFECT TRANSISTOR

GPT10N65 Features

* This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offer

GPT10N65-Greatpower.pdf

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Datasheet Details

Part number:

GPT10N65

Manufacturer:

Greatpower

File Size:

1.17 MB

Description:

Power field effect transistor.

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